25pt series rohs rohs stansard scrs, 25a main features symbol value unit i t(rms) v /v drm rrm i gt 25 a v ma 4 to 40 600 to 1200 description a k a g to-220ab (non-lnsulated) k a g to-220ab (lnsulated) (25ptxxa) (25ptxxai) the 25pt series of silicon controlled rectifiers are high performance glass passivated technology, and are suitable for general purpose applications. using clip assembly technology, they provide a superior performance in surge current capabilities. 2 to -263 ( d pak) (25ptxxh) symbol i t ( rms ) rms on - state current full sine wave i tsm non repetitive surge peak on - state current ( full cycle , t initial = 25 c) j a 2 i t 2 i t value for fusing 450 2 a s di / dt critical rate of rise of on - state current 1 50 i gm peak gate current p g ( av ) average gate power dissipation t stg storage temperature range operating junction temperature range - 40 to + 150 - 40 to + 125 oc a / s aa w unit value 300 f =50 hz f =60 hz t = 20 ms t = 16.7 ms t = 10 ms p f = 60 hz t =125oc j t = 125oc j t = 125oc j t = 20 s p t j absolute maximum ratings parameter test conditions v 600 to 1200 t =125oc j v drm v rrm repetitive peak off-state voltage repetitive peak reverse voltage (180 conduction angle ) 4 1 average on-state current (180 conduction angle) i t ( av ) 16 a i = 2xl , t 100 ns g gt r to-263/to-220ab to-220ab insulated/to-220f tc=100c tc=85c maximum gate power p gm w 10 t =20 s p t = 125oc j to-263/to-220ab to-220ab insulated/to-220f tc=100c tc=85c 25 314 a a g k 3(g) 1(k) 2(a) page 1 of 6 www.nellsemi.com to-220f (ito-220ab) ( 25ptxxaf )
25ptxxxx unit i gt v gd i h ma dv / dt v tm i drm i rrm ma i l v = 12v, r = 33 d l v = v , r = 3.3k d drm l r = 220 gk i = 500ma, gate open t i = 1.2 i g gt v = 67% v gate open d drm , - 0.2 60 40 500 ma vv ma v/s i = 50a, t = 380s t p t = 125c j t = 25c j t = 25c j v a electrical specifications ( t = 25 oc unless otherwise specified ) j test conditions symbol v =v , v =v d drm r rrm 1.6 5 2 r = 220 gk max. max. min. max. max. min. max. max. max. 4 thermal resistance r th ( j - c ) junction to case ( dc ) r th ( j - a ) junction to ambient 1.0 45 c/w c/w unit value symbol parameter 2 d pak/to-220ab to-220ab insulated/to-220f 2 to-263(d pak) to-220ab/to-220ab insulated/to-220f 1.5 60 v gt v 0.77 v to t = 125c j product selector part number voltage ( x x ) sensitivity 600 v 40 m a 1000 v 25ptxxa/25ptxxal 25ptxxaf v v 800 v v package to-220ab v v 2 d pak 40 m a r d m t = 125c j t = 125c j t = 125c j max. max. 14 2 s = 1 cm threshold voltage dynamic resistance min. 1.3 s=copper surface under tab d 10 40 4 100 150 v 1200 v vv vv v v v v vv 25ptxxa-d/25ptxxal-d 25ptxxh-d 4~10 m a 4~10 m a to-220ab 2 d pak page 2 of 6 www.nellsemi.com dynamic characteristics t gt t q 1.0 s unit value symbol parameter i = 40a, v = v (max.), tm d drm i = 0.1 a, di /dt = 5a/ s, t = 25c g g j - 100 turn - on time test conditions min. typ. max. - - - s commutated v = 67% v , i = 50a, d drm tm v = 25v , r = 100?, di /dt = 30a/ s, r gk tm dv /dt = 50v/ s, t = 125c d j turn - off time gate-controlled 25ptxxaf-d v v v v v v v v 4~10 m a to-220f 40 m a to-220f 25ptxxh 25pt series rohs rohs
ordering information scheme scr series package type current voltage code a = to-220ab (non-insulated) ai = to-220ab ( insulated) 25 = 25a, i t(rms) 25 pt 06 06 = 600v 2 h = to-263 (d pak) 08 = 800v 10 = 1000v fig.1 maximum average power dissipation versus average on-state current. fig.2 average and dc on-state current versus case temperature. p ( w ) 0 8 10 12 14 16 18 20 22 0 2 4 6 8 10 12 0 2 4 6 8 10 12 14 16 18 0 25 50 75 100 125 l (a) t(av) - d i sensitivity gt 12 = 1200v d = 4~10ma blank = 4~40ma 360 i (a) t(av) 6 4 2 14 16 =180 d . c . to-220abins to-220ab d2pak t (c) case 20 22 24 26 28 page 3 of 6 www.nellsemi.com note : xx = voltage , y = sensitivity ordering information 25ptxxa-y 25ptxxa-y ordering type marking package weight , base q ty delivery mode to-220ab 2.0g 50 tube 25ptxxai-y 25ptxxai-y 2.3g 50 tube 25ptxxaf-y 25ptxxaf-y to-220f 2.0g 50 to-220ab (insulated) tube 25ptxxh-y 25ptxxh-y 2 to-263(d pak) 2.0g 50 tube af = to-220f ( ito-220ab) i (a) t(av) to-220f 25pt series rohs rohs
fig.7 surge peak on-state current versus number of cycles. fig.5 relative variation of thermal impedance versus pulse duration. (to-220ab ins / to-220f) 0.01 l , l , l [t ] / l ,l ,l [t =25c] gt h l j gt h l j 0.0 0.5 1.0 1.5 2.0 2.5 -40 100 fig.8 non-repetitive surge peak on-state current , and corresponding values 2 of l t 50 0 1 10 100 1000 2000 100 1000 0.01 0.10 1.00 10.00 l gt i & i h l t (c) j -20 0 20 40 60 80 120 140 t = 1 0 ms p one cycle non repetitive t initial = 25 c j repetitive t = 83 c case number of cycles 100 150 200 250 300 350 l tsm t initial = 25c j 2 l t dl/dt limitattion sinusoidal pulse width t (ms) p fig.6 relative variation of gate trigger holding, and latching currents versus junction temperature. i ( a ) , l2t (a2s) tsm i ( a ) tsm k=[z /r ] th th 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 1.0e+03 page 4 of 6 www.nellsemi.com fig.3 average and dc on-state current versus ambient temperature. fig.4 relative variation of thermal impedance versus pulse duration.(d2pak, and to-220ab) 0.0 0.5 1.0 1.5 2.0 2.5 3.5 3.0 l (a) t(av) 0 25 50 75 100 125 k=[z /r ] th th 1.00 0.10 0.01 1e-3 1e-2 1e-1 1e+0 1e+1 1e+2 5e+2 =180 d . c . to-220ab d2pak z ( j - c ) th z ( j - a ) th t (s) p to-220f to-220abins t (c) amb 25pt series rohs rohs 0.10 1.00 10.00 z th(j-c) z th(j-a) t (s) p
2.87 (0.113) 2.62 (0.103) 9.40 (0.370)9.14 (0.360) 10.54 (0.415) max . 16.13 (0.635)15.87 (0.625) pin 4.06 (0.160)3.56 (0.140) 1.45 (0.057)1.14 (0.045) 2.67 (0.105)2.41 (0.095) 2.65 (0.104)2.45 (0.096) 5.20 (0.205)4.95 (0.195) 0.90 (0.035)0.70 (0.028) 3.91 (0.154)3.74 (0.148) k ga 4.70 (0.185)4.44 (0.1754) 1.39 (0.055)1.14 (0.045) 3.68 (0.145)3.43 (0.135) 8.89 (0.350)8.38 (0.330) 29.16 (1.148) 28.40 (1.118) 14.22 (0.560)13.46 (0.530) 0.56 (0.022)0.36 (0.014) 2.79 (0.110) 2.54 (0.100) 15.32 (0.603)14.55 (0.573) to-220ab 2 to-263(d pak) 2.79 (0.110) 0.36 (0.014) 2.79 (0.110)2.29 (0.090) 1.40 (0.055)1.19 (0.047) 0 to 0.254 (0 to 0.01) 1.40 (0.055)1.14 (0.045) 4.83 (0.190)4.06 (0.160) 10.45 (0.411) 9.65 (0.380) 6.22 (0.245) 9.14 (0.360)8.13 (0.320) 15.00 (0.591) 0.940 (0.037)0.686 (0.027) 2.67 (0.105)2.41 (0.095) 5.20 (0.205)4.95 (0.195) 15.85 (0.624) 3.56 (0.140) 0.53 (0.021) case style page 5 of 6 www.nellsemi.com i ( a ) tm fig.9 on-state characteristics (maximum values) 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10 t max.: j v = 0.77v to r = 14m d v (v) tm 2 s(cm ) epoxy printed circuit board f copper thickness = 35 m 100 1000 0 4 12 8 16 20 24 28 32 36 40 0 30 20 10 40 50 60 70 80 fig.10 thermal resistance junction to ambient versus copper surface 2 under tab (d pak) r ( j-a ) (c/w) th r4, 3(g) 1(k) 2(a) k g a a 25pt series rohs rohs
case style ito-220ab a k g 3.3 3.1 13.7 13.5 all dimensions in millimeters 16.0 15.8 2.8 2.6 0.48 0.44 2.54 typ 0.9 0.7 2.54 typ 16.4 15.4 7.1 6.7 3.7 3.2 10 .6 1 0 .4 4.8 4.6 10 2.85 2.65 3.4 3.1 3(g) 1(k) 2(a) page 6 of 6 www.nellsemi.com 25pt series rohs rohs
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